BUK9520-100B,127

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BUK9520-100B,127 datasheet

• Маркировка
  BUK9520-100B,127
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9520-100B,127 Configuration: Single Continuous Drain Current: 63 A Current - Continuous Drain (id) @ 25?° C: 63A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53.4nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 5657pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Power - Max: 203W Power Dissipation: 203 W Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 20 mOhms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 20 mOhms Factory Pack Quantity: 50 Other Names: 568-5227
• Количество страниц
  12 шт.
• Форматы файла
  HTML, PDF

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